RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited D4U1636181DC 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Chun Well Technology Holding Limited D4U1636181DC 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Chun Well Technology Holding Limited D4U1636181DC 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
17.3
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited D4U1636181DC 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
46
左右 -28% 更低的延时
更快的写入速度,GB/s
12.2
1,519.2
测试中的平均数值
更高的内存带宽,mbps
21300
3200
左右 6.66 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited D4U1636181DC 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
36
读取速度,GB/s
2,909.8
17.3
写入速度,GB/s
1,519.2
12.2
内存带宽,mbps
3200
21300
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
241
3169
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston HP37D4U1S8ME-16X 16GB
Samsung M393B1K70CH0-CH9 8GB
UMAX Technology 16GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Kingston KHX3200C16D4/8GX 8GB
Samsung M471B5273CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston KV0M5R-MIE 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KHX3000C15D4/8GX 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-4000C19-8GTZSW 8GB
报告一个错误
×
Bug description
Source link