Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMD8GX4M2B3466C18 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 19

测试中的平均数值

Corsair CMD8GX4M2B3466C18 4GB

需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 46

左右 -130% 更低的延时
更快的写入速度，GB/s

15.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMD8GX4M2B3466C18 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 20
读取速度，GB/s

2,909.8 19.0
写入速度，GB/s

1,519.2 15.3
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M1A2400C16 16GB

Corsair CMK16GX4M1A2400C16 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905712-048.A00G 16GB

Kingston 9905712-048.A00G 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB