Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMK8GX4M2A2400C14 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.1

测试中的平均数值

Corsair CMK8GX4M2A2400C14 4GB

需要考虑的原因
Corsair CMK8GX4M2A2400C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的写入速度，GB/s

11.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK8GX4M2A2400C14 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

2,909.8 16.1
写入速度，GB/s

1,519.2 11.9
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2730

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C11D3/4GX 4GB

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Team Group Inc. ZEUS-2133 8GB

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Samsung M471A1K1KBB0-CPB 8GB

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Crucial Technology CT16G4SFD8213.M16FA 16GB

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Crucial Technology BLS8G3N169ES4.16FE 8GB

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Corsair CMD16GX4M2B3000C15 8GB

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Kingston 9905316-106.A02LF 1GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Samsung M471B5773DH0-CH9 2GB

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G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

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