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Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS4G4D26BFSC.8FD2 4GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
18.7
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
46
左右 -119% 更低的延时
更快的写入速度,GB/s
13.6
1,519.2
测试中的平均数值
更高的内存带宽,mbps
21300
3200
左右 6.66 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
21
读取速度,GB/s
2,909.8
18.7
写入速度,GB/s
1,519.2
13.6
内存带宽,mbps
3200
21300
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
241
2807
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
G Skill Intl F3-1333C9-4GIS 4GB
EVGA 16G-D4-2800-MR 4GB
Crucial Technology CT51264BD1339.M16F 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMW256GX4M8E3200C16 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Samsung M471A4G43BB1-CWE 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3000C14-8GTZ 8GB
Kingston 9905471-006.A00LF 4GB
Samsung M392A4K40BM0-CRC 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston HP26D4S9S8MD-8 8GB
Kingston K1N7HK-ELC 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung M393B1G70BH0-YK0 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
报告一个错误
×
Bug description
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