Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT4G4SFS8213.C8FBD2 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 12.9

测试中的平均数值

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更快的写入速度，GB/s

6.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

2,909.8 12.9
写入速度，GB/s

1,519.2 6.0
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 1633

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F3-1333C9-4GIS 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Samsung M393B1G70BH0-YK0 8GB

Corsair CMK64GX4M4X4000C18 16GB

Corsair CMK64GX4M4X4000C18 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905630-030.A00G 16GB

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