Samsung M3 78T3354BZ0-CCC 256MB vs DSL Memory D4SS1G081SH24A-A 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.6

测试中的平均数值

DSL Memory D4SS1G081SH24A-A 8GB

需要考虑的原因
DSL Memory D4SS1G081SH24A-A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

7.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

DSL Memory D4SS1G081SH24A-A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 14.6
写入速度，GB/s

1,519.2 7.0
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Corsair CMK32GX4M2Z3200C16 16GB

Corsair CMK32GX4M2Z3200C16 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Kingston CBD32D4S2S1ME-8 8GB

Kingston CBD32D4S2S1ME-8 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB