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Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C15-8GIS 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2400C15-8GIS 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
G Skill Intl F4-2400C15-8GIS 8GB

G Skill Intl F4-2400C15-8GIS 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.6
    测试中的平均数值
G Skill Intl F4-2400C15-8GIS 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GIS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 46
    左右 -39% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C15-8GIS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 33
  • 读取速度，GB/s
    2,909.8 left arrow 15.6
  • 写入速度，GB/s
    1,519.2 left arrow 11.1
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2823

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

G Skill Intl F4-2400C15-8GIS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5273DH0-CH9 4GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA81GU6DJR8N-VK 8GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston 9965669-019.A00G 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
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Crucial Technology BLS8G4D30CESTK.8FD 8GB
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内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK32GX4M2C3200C18 16GB
Corsair CMK32GX4M2C3200C18 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Team Group Inc. DDR4 2800 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMD32GX4M4A2400C12 8GB
Corsair CMD32GX4M4A2400C12 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM