Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3200C15-8GVK 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 19

测试中的平均数值

G Skill Intl F4-3200C15-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更快的写入速度，GB/s

14.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C15-8GVK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

2,909.8 19.0
写入速度，GB/s

1,519.2 14.5
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905624-004.A00G 4GB

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Dust Leopard DDR4-2400 CL17 8GB 8GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-2400C17-16GIS 16GB