Samsung M3 78T3354BZ0-CCC 256MB vs Hewlett-Packard 7EH55AA# 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 18.4

测试中的平均数值

Hewlett-Packard 7EH55AA# 8GB

需要考虑的原因
Hewlett-Packard 7EH55AA# 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

13.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Hewlett-Packard 7EH55AA# 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 18.4
写入速度，GB/s

1,519.2 13.1
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 3219

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT102464BF160B-16F 8GB

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SK Hynix HMA82GS6DJR8N-WM 16GB

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Crucial Technology CT51264BA160B.C16F 4GB

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AMD AE34G2139U2 4GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

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Patriot Memory (PDP Systems) PSD22G6672 2GB

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OCMEMORY OCM2933CL16-16GBH 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Samsung M47472K43DB1-CTD 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Apacer Technology GD2.1527WH.002 8GB