RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
16
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
46
左右 -92% 更低的延时
更快的写入速度,GB/s
12.5
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
24
读取速度,GB/s
2,909.8
16.0
写入速度,GB/s
1,519.2
12.5
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2925
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK16GX4M2C3200C16 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M4B3333C16 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905665-009.A00G 4GB
Samsung M393B1K70CH0-CH9 8GB
Super Talent F24EA8GS 8GB
Kingston KF552C40-16 16GB
Corsair CMK16GX4M2B3466C16 8GB
Kingston 99U5584-005.A00LF 4GB
Samsung M378A1K43BB2-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M4E4133C19 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
A-DATA Technology ADOVE1A0834E 1GB
V-GEN D4H8GL36A8TXV 8GB
报告一个错误
×
Bug description
Source link