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Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
46
左右 -12% 更低的延时
更快的读取速度,GB/s
7.8
2
测试中的平均数值
更快的写入速度,GB/s
6.1
1,519.2
测试中的平均数值
更高的内存带宽,mbps
17000
3200
左右 5.31 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
41
读取速度,GB/s
2,909.8
7.8
写入速度,GB/s
1,519.2
6.1
内存带宽,mbps
3200
17000
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
241
1512
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM的比较
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology CT8G4DFS824A.M8FH 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-2133C15-4GRR 4GB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA851S6AFR6N-UH 4GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Corsair CM2X1024-8500C5D 1GB
Micron Technology TEAMGROUP-UD4-2133 16GB
AMD R534G1601U1S-UO 4GB
Corsair CMW64GX4M8C3000C15 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C19-8GRS 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Avant Technology W6451U67J7240NB 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMW16GX4M2K4000C19 8GB
Samsung M3 78T2953EZ3-CF7 1GB
SK Hynix HMA84GL7MMR4N-TF 32GB
报告一个错误
×
Bug description
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