Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 99U5625-015.A00G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston 99U5625-015.A00G 16GB

Kingston 99U5625-015.A00G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 84

左右 45% 更低的延时
更快的读取速度，GB/s

2 14.4

测试中的平均数值

Kingston 99U5625-015.A00G 16GB

需要考虑的原因
Kingston 99U5625-015.A00G 16GB

报告一个错误

更快的写入速度，GB/s

7.2 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 99U5625-015.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 84
读取速度，GB/s

2,909.8 14.4
写入速度，GB/s

1,519.2 7.2
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 99U5625-015.A00G 16GB

Kingston 99U5625-015.A00G 16GB

G Skill Intl F4-3200C14-8GTZKW 8GB

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Corsair CM4X16GC3600C18K2D 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.CAGMT.40C0B 8GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

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Samsung M471B1G73QH0-YK0 8GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB