Samsung M3 78T3354BZ0-CCC 256MB vs Kingston RB24D4U7S8MB-8 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Kingston RB24D4U7S8MB-8 8GB

需要考虑的原因
Kingston RB24D4U7S8MB-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 46

左右 -100% 更低的延时
更快的写入速度，GB/s

12.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston RB24D4U7S8MB-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 23
读取速度，GB/s

2,909.8 17.3
写入速度，GB/s

1,519.2 12.3
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U7AFR8N-TF 4GB

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Crucial Technology BLS4G4D26BFSC.8FE 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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Samsung M471B5173DB0-YK0 4GB

Kingston 9905702-137.A00G 8GB

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Corsair CMWX8GD3600C18W2D 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK32GX4M2B3000C15 16GB

Corsair CMK32GX4M2B3000C15 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Patriot Memory (PDP Systems) PSD44G213381 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB