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Samsung M3 78T3354BZ0-CCC 256MB
Nanya Technology NT8GA64D88AX3S-HR 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Nanya Technology NT8GA64D88AX3S-HR 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 96
    左右 52% 更低的延时
Nanya Technology NT8GA64D88AX3S-HR 8GB 需要考虑的原因
Nanya Technology NT8GA64D88AX3S-HR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    6.8 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Nanya Technology NT8GA64D88AX3S-HR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 96
  • 读取速度，GB/s
    2,909.8 left arrow 6.8
  • 写入速度，GB/s
    1,519.2 left arrow 4.2
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 992

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Nanya Technology NT8GA64D88AX3S-HR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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Corsair CMY16GX3M4A2133C8 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Corsair CMR32GX4M4C3000C15 8GB
内存RAM
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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM
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内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
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