Samsung M3 78T3354BZ0-CCC 256MB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16

测试中的平均数值

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

10.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

2,909.8 16.0
写入速度，GB/s

1,519.2 10.6
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 3026

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C16-16GTZR 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Unifosa Corporation HU564404EP0200 4GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

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G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Samsung M393B1G70BH0-YK0 8GB

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Kingston KHX3733C19D4/8GX 8GB

Kingston KHX3733C19D4/8GX 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905622-075.A00G 8GB

Kingston 9905622-075.A00G 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMW32GX4M2Z2933C16 16GB

Corsair CMW32GX4M2Z2933C16 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N