Samsung M3 78T3354BZ0-CCC 256MB vs Ramaxel Technology RMUA5210ME88HCF-3200 32GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.8

测试中的平均数值

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

需要考虑的原因
Ramaxel Technology RMUA5210ME88HCF-3200 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 -59% 更低的延时
更快的写入速度，GB/s

8.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 29
读取速度，GB/s

2,909.8 14.8
写入速度，GB/s

1,519.2 8.8
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 9965516-430.A00G 16GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

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Samsung M393B1K70QB0-CK0 8GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Team Group Inc. 16GB

Team Group Inc. 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Corsair CMV16GX4M1A2666C18 16GB

Corsair CMV16GX4M1A2666C18 16GB