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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Patriot Memory (PDP Systems) PSD48G320081 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
Patriot Memory (PDP Systems) PSD48G320081 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD48G320081 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    12.3 left arrow 16.8
  • 写入速度，GB/s
    7.4 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1678 left arrow 3049

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Patriot Memory (PDP Systems) PSD48G320081 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
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