RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Patriot Memory (PDP Systems) PSD48G320081 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Overall score
Patriot Memory (PDP Systems) PSD48G320081 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
35
Around 26% lower latency
Reasons to consider
Patriot Memory (PDP Systems) PSD48G320081 8GB
Report a bug
Faster reading speed, GB/s
16.8
12.3
Average value in the tests
Faster write speed, GB/s
13.6
7.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
35
Read speed, GB/s
12.3
16.8
Write speed, GB/s
7.4
13.6
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1678
3049
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM comparisons
SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Patriot Memory (PDP Systems) PSD48G320081 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Corsair CM4X8GE2666C16K8 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHX2133C14S4/16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMH16GX4M2Z3600C18 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMK64GX4M4C3000C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR32GX4M4C3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.M16FR 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C18-8GRS 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
V-Color Technology Inc. TA48G32S816SK 8GB
Crucial Technology RM51264BA1339.16FR 4GB
Corsair CMW32GX4M2A2666C16 16GB
Kingston 99P5471-002.AOOLF 4GB
G Skill Intl F4-3000C15-4GVR 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386A2G40DB0-CPB 16GB
Report a bug
×
Bug description
Source link