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Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244BB0-CRC 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M378A5244BB0-CRC 4GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值
Samsung M378A5244BB0-CRC 4GB 需要考虑的原因
Samsung M378A5244BB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 46
    左右 -64% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244BB0-CRC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 28
  • 读取速度，GB/s
    2,909.8 left arrow 16.0
  • 写入速度，GB/s
    1,519.2 left arrow 11.3
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2436

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Samsung M378A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMK32GX4M2K4133C19 16GB
Corsair CMK32GX4M2K4133C19 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3333C16-8GVR 8GB
G Skill Intl F4-3333C16-8GVR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CMW64GX4M4Z2933C16 16GB
Corsair CMW64GX4M4Z2933C16 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Heoriady M378A1K43BB2-CTD 8GB
Heoriady M378A1K43BB2-CTD 8GB
内存RAM