Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M393A1G40EB1-CRC 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 52

左右 12% 更低的延时
更快的读取速度，GB/s

2 10.5

测试中的平均数值

Samsung M393A1G40EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB

报告一个错误

更快的写入速度，GB/s

7.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M393A1G40EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 52
读取速度，GB/s

2,909.8 10.5
写入速度，GB/s

1,519.2 7.7
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-001.A01LF 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

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Kingston 99U5429-007.A00LF 2GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

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