Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M471A1G44AB0-CWE 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 50

左右 8% 更低的延时
更快的读取速度，GB/s

2 15.3

测试中的平均数值

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更快的写入速度，GB/s

10.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M471A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 50
读取速度，GB/s

2,909.8 15.3
写入速度，GB/s

1,519.2 10.9
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-023.A00LF 4GB

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Corsair CMK16GX4M4A2800C16 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Kingston K1N7HK-ELC 2GB

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Kingston 99U5428-018.A00LF 8GB

Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB