Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 56

左右 18% 更低的延时

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的读取速度，GB/s

20.1 2

测试中的平均数值
更快的写入速度，GB/s

10.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 56
读取速度，GB/s

2,909.8 20.1
写入速度，GB/s

1,519.2 10.5
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

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Kingston HX316C10F/8 8GB

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V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Kingston 9965525-140.A00LF 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

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Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB