RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
低于PassMark测试中的延时,ns
46
56
左右 18% 更低的延时
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
更快的读取速度,GB/s
20.1
2
测试中的平均数值
更快的写入速度,GB/s
10.5
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
56
读取速度,GB/s
2,909.8
20.1
写入速度,GB/s
1,519.2
10.5
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2455
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston XW21KG-HYD-NX 8GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-3000C14-8GVK 8GB
Corsair CMD16GX4M2E4000C19 8GB
Corsair CM4X8GE2666C16K8 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905701-004.A00G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Kingston 99U5474-026.A00LF 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
G Skill Intl F5-5600J4040C16G 16GB
Avant Technology J641GU42J9266NL 8GB
Samsung M471A2K43DB1-CWE 16GB
Kingston KF548C38-16 16GB
Kingston 9905403-011.A03LF 2GB
Kingston CBD32D4S2S1ME-8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Samsung DDR3 8GB 1600MHz 8GB
Apacer Technology 78.BAGP4.AR50C 4GB
报告一个错误
×
Bug description
Source link