Samsung M3 78T3354BZ0-CCC 256MB vs SK Hynix HMA41GR7MFR4N-TF 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 52

左右 12% 更低的延时
更快的读取速度，GB/s

2 10.1

测试中的平均数值

SK Hynix HMA41GR7MFR4N-TF 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TF 8GB

报告一个错误

更快的写入速度，GB/s

7.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA41GR7MFR4N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 52
读取速度，GB/s

2,909.8 10.1
写入速度，GB/s

1,519.2 7.5
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2176

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT4G4D26AFTA.8FBD 4GB

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Kingston 9905471-006.A01LF 4GB

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Mushkin 99[2/7/4]209F 8GB

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Corsair CMK8GX4M2D2666C16 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Apacer Technology 78.C2GF6.AU20B 8GB

Apacer Technology 78.C2GF6.AU20B 8GB