Samsung M3 78T3354BZ0-CCC 256MB vs V-Color Technology Inc. TL48G24S815RGB 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.5

测试中的平均数值

V-Color Technology Inc. TL48G24S815RGB 8GB

需要考虑的原因
V-Color Technology Inc. TL48G24S815RGB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

6.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

V-Color Technology Inc. TL48G24S815RGB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 14.5
写入速度，GB/s

1,519.2 6.8
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Asgard VMA42UH-MEC1U2AJ2 16GB

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Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

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Samsung M378B5773DH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Corsair CMK32GX4M2Z4000C18 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M471A1K43CB1-CRC 8GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB