RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
V-GEN D4H16GS24A8 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs V-GEN D4H16GS24A8 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
V-GEN D4H16GS24A8 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
14.5
测试中的平均数值
需要考虑的原因
V-GEN D4H16GS24A8 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
46
左右 -100% 更低的延时
更快的写入速度,GB/s
7.3
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
V-GEN D4H16GS24A8 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
23
读取速度,GB/s
2,909.8
14.5
写入速度,GB/s
1,519.2
7.3
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2361
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
V-GEN D4H16GS24A8 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair VSA2GSDS667C4 2GB
Neo Forza NMUD480E86-3200 8GB
SpecTek Incorporated PSD34G13332 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMD32GX4M4A2400C12 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMT64GX4M8X3000C15 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2666C15-4GRR 4GB
Kingston 9905403-515.A00LF 8GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X8GF2400Z16K4 8GB
Kingston HX318C10FK/4 4GB
Samsung M393A2K40CB2-CTD 16GB
Kingston 9965525-018.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
AMD R534G1601U1S-UO 4GB
Kingston 9965600-027.A01G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
报告一个错误
×
Bug description
Source link