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Samsung M471B5673FH0-CF8 2GB
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB

Samsung M471B5673FH0-CF8 2GB vs Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB

Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 更快的读取速度，GB/s
    10.6 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 4.7
    测试中的平均数值
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB 需要考虑的原因
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更高的内存带宽，mbps
    12800 left arrow 8500
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 10.0
  • 写入速度，GB/s
    6.8 left arrow 4.7
  • 内存带宽，mbps
    8500 left arrow 12800
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 1471

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB RAM的比较

G Skill Intl F4-4800C18-8GTRS 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB
Atla Electronics Co. Ltd. AD3SST4GG5WB-CKGEL 4GB
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SK Hynix HMT351U6CFR8C-H9 4GB
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内存RAM
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内存RAM
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Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
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内存RAM
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Corsair CMK8GX4M2B4200C19 4GB
内存RAM
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Kingston 99U5474-028.A00LF 4GB
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内存RAM