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Samsung M3 78T5663FB3-CF7 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Samsung M3 78T5663FB3-CF7 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

总分
star star star star star
Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

总分
star star star star star
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

差异 规格 评论

差异

Samsung M3 78T5663FB3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663FB3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 86
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB 需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 2,096.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663FB3-CF7 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 86
  • 读取速度，GB/s
    4,168.7 left arrow 14.3
  • 写入速度，GB/s
    2,096.4 left arrow 8.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 1658

Samsung M3 78T5663FB3-CF7 2GB RAM的比较

Samsung M3 78T5663EH3-CF7 2GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM
Samsung M3 78T5663FB3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Kingston 99U5713-001.A00G 4GB
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Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
INTENSO 4GB
INTENSO 4GB
内存RAM
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Samsung M471A1K43DB1-CWE 8GB
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Kingston K6VDX7-HYD 8GB
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A-DATA Technology AD73I1C1674EV 4GB
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Super Talent F24EB8GS 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Kingston KHX1600C9D3/8G 8GB
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内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
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Samsung M471B5273EB0-CK0 4GB
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内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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Corsair CMK16GX4M1A2666C16 16GB
内存RAM
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Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM