Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CMK32GX4M2C3200C18 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.1

测试中的平均数值

Corsair CMK32GX4M2C3200C18 16GB

需要考虑的原因
Corsair CMK32GX4M2C3200C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 -100% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMK32GX4M2C3200C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 30
读取速度，GB/s

4,595.2 16.8
写入速度，GB/s

2,168.2 13.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 3337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C11D3/4GX 4GB

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Apacer Technology 78.01GA0.9K5 1GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

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PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-2400C15-16GVR 16GB

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Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

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Kingston 99U5429-014.A00LF 4GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB