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Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMSX16GX4M2A3200C22 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CMSX16GX4M2A3200C22 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 14.0
    测试中的平均数值
Corsair CMSX16GX4M2A3200C22 8GB 需要考虑的原因
Corsair CMSX16GX4M2A3200C22 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 60
    左右 -50% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMSX16GX4M2A3200C22 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 40
  • 读取速度，GB/s
    4,595.2 left arrow 16.8
  • 写入速度，GB/s
    2,168.2 left arrow 14.0
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3015

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Corsair CMSX16GX4M2A3200C22 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston KMKYF9-MIB 8GB
Kingston KMKYF9-MIB 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Corsair CMK64GX4M2Z4000C18 32GB
Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMK32GX4M4A2666C15 8GB
Corsair CMK32GX4M4A2666C15 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA82GU6CJR8N-XN 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
A-DATA Technology DDR4 4133 8GB
A-DATA Technology DDR4 4133 8GB
内存RAM