Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,168.2 11.6

测试中的平均数值

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 -131% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 26
读取速度，GB/s

4,595.2 15.1
写入速度，GB/s

2,168.2 11.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Kingston KVR533D2N4 512MB

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Corsair CMSX64GX4M4A2666C18 16GB

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Samsung M378B5273CH0-CH9 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3333C16-8GTZSW 8GB

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Kingston 99U5474-037.A00LF 4GB

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Kingston 9905403-011.A03LF 2GB

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Corsair CMD16GX4M2A2400C14 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Samsung M378B5673EH1-CF8 2GB

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G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB