Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-2133C15-16GFX 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.1

测试中的平均数值

G Skill Intl F4-2133C15-16GFX 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GFX 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 60

左右 -161% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2133C15-16GFX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 23
读取速度，GB/s

4,595.2 17.2
写入速度，GB/s

2,168.2 13.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 3116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Corsair CMK16GX4M2B3466C16 8GB

Corsair CMK16GX4M2B3466C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Kllisre 0000 8GB

Kllisre 0000 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Essencore Limited KD4AGU88C-26N190A 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB