Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-2666C18-8GFX 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-2666C18-8GFX 8GB

G Skill Intl F4-2666C18-8GFX 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

低于PassMark测试中的延时，ns

60 70

左右 14% 更低的延时
更快的读取速度，GB/s

4 15.4

测试中的平均数值

G Skill Intl F4-2666C18-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2666C18-8GFX 8GB

报告一个错误

更快的写入速度，GB/s

8.3 2,168.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2666C18-8GFX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 70
读取速度，GB/s

4,595.2 15.4
写入速度，GB/s

2,168.2 8.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

941 1923

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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A-DATA Technology AO1P24HC8T1-BQXS 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology CT16G4DFD824A.C16FDD 16GB

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Crucial Technology CT102464BA160B.M16 8GB

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Panram International Corporation D4N2400PS-8G 8GB

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Kingston KF2933C17S4/16G 16GB

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Crucial Technology CT32G4SFD832A.M16FF 32GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

V-Color Technology Inc. TL48G30S816KRGB 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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A-DATA Technology VDQVE1B16 2GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB