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Samsung M3 78T5663RZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 13.8
    测试中的平均数值
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 60
    左右 -100% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 30
  • 读取速度，GB/s
    4,595.2 left arrow 16.8
  • 写入速度，GB/s
    2,168.2 left arrow 13.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3258

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905701-032.A00G 16GB
Kingston 9905701-032.A00G 16GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3333C16-16GTZR 16GB
G Skill Intl F4-3333C16-16GTZR 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston K821PJ-MIH 16GB
Kingston K821PJ-MIH 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CM4X8GD3000C16K4 8GB
Corsair CM4X8GD3000C16K4 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston KHX2133C14D4/8G 8GB
Kingston KHX2133C14D4/8G 8GB
内存RAM