Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 60

左右 -107% 更低的延时
更快的写入速度，GB/s

9.8 2,168.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 29
读取速度，GB/s

4,595.2 13.7
写入速度，GB/s

2,168.2 9.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2407

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB

Kingston 99U5458-002.A00LF 2GB

Kingston 99U5458-002.A00LF 2GB

Essencore Limited KD4AGU88C-26N190A 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB