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Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX4266C19D4/8GX 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Kingston KHX4266C19D4/8GX 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Kingston KHX4266C19D4/8GX 8GB

Kingston KHX4266C19D4/8GX 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 16.8
    测试中的平均数值
Kingston KHX4266C19D4/8GX 8GB 需要考虑的原因
Kingston KHX4266C19D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 60
    左右 -122% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX4266C19D4/8GX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 27
  • 读取速度，GB/s
    4,595.2 left arrow 18.6
  • 写入速度，GB/s
    2,168.2 left arrow 16.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3758

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Kingston KHX4266C19D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX4266C19D4/8GX 8GB
Kingston KHX4266C19D4/8GX 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston CBD24D4S7S8MB-8 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK32GX4M4Z3200C16 8GB
Corsair CMK32GX4M4Z3200C16 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CM4X16GC3000C16K8 16GB
Corsair CM4X16GC3000C16K8 16GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Kingston 9905471-084.A01LF 8GB
Kingston 9905471-084.A01LF 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMWX8GD3000C15W4 8GB
Corsair CMWX8GD3000C15W4 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
内存RAM