Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 16ATF2G64HZ-2G3B2 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,168.2 12.6

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3B2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B2 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 60

左右 -150% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 24
读取速度，GB/s

4,595.2 16.6
写入速度，GB/s

2,168.2 12.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMZ16GX3M2A2400C10 8GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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Kingston 9905702-006.A00G 8GB

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Kingston KP223C-ELD 2GB

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Essencore Limited IM4AGU88N24-FFFHMB 16GB

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