Samsung M3 78T5663RZ3-CF7 2GB vs Corsair CMW64GX4M8C3466C16 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Corsair CMW64GX4M8C3466C16 8GB

Corsair CMW64GX4M8C3466C16 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

65 76

左右 14% 更低的延时
更快的读取速度，GB/s

4 14

测试中的平均数值
更快的写入速度，GB/s

2,784.6 11.7

测试中的平均数值

Corsair CMW64GX4M8C3466C16 8GB

需要考虑的原因
Corsair CMW64GX4M8C3466C16 8GB

报告一个错误

更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMW64GX4M8C3466C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 76
读取速度，GB/s

4,806.8 14.0
写入速度，GB/s

2,784.6 11.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 2087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M3 78T5663RZ3-CF7 2GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston KHX21334D4/8G 8GB

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-3600C16-16GTRG 16GB