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Samsung M3 78T5663RZ3-CF7 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Essencore Limited IM48GU48N28-GGGHM 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 68
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
Essencore Limited IM48GU48N28-GGGHM 8GB 需要考虑的原因
Essencore Limited IM48GU48N28-GGGHM 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.6 left arrow 2,784.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 68
  • 读取速度，GB/s
    4,806.8 left arrow 16.4
  • 写入速度，GB/s
    2,784.6 left arrow 8.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    932 left arrow 1924

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Essencore Limited IM48GU48N28-GGGHM 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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