TwinMOS 8DPT5MK8-TATP 2GB vs Kingston KMKYF9-MIB 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值

Kingston KMKYF9-MIB 8GB

需要考虑的原因
Kingston KMKYF9-MIB 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 53

左右 -51% 更低的延时
更快的写入速度，GB/s

10.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KMKYF9-MIB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 35
读取速度，GB/s

3,726.4 13.9
写入速度，GB/s

1,590.1 10.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451U6AFR8N-TF 4GB

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Samsung M378B5773DH0-CH9 2GB

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SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMW64GX4M2D3000C16 32GB

Corsair CMW64GX4M2D3000C16 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

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G Skill Intl F4-4000C18-8GTZ 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMD32GX4M4C3200C14T 8GB