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Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 13.6
    测试中的平均数值
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 65
    左右 -59% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 41
  • 读取速度，GB/s
    4,806.8 left arrow 15.8
  • 写入速度，GB/s
    2,784.6 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3073

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-4266C17-16GTRGB 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Kingston 9905624-008.A00G 8GB
Kingston 9905624-008.A00G 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM