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Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Micron Technology 8ATF1G64HZ-2G6E3 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 12.3
    测试中的平均数值
Micron Technology 8ATF1G64HZ-2G6E3 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E3 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 65
    左右 -86% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 35
  • 读取速度，GB/s
    4,806.8 left arrow 15.0
  • 写入速度，GB/s
    2,784.6 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2841

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C15-8GTZ 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965596-031.B00G 8GB
Kingston 9965596-031.B00G 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMU32GX4M4C3400C16 8GB
Corsair CMU32GX4M4C3400C16 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CB8GS2400.C8JT 8GB
Crucial Technology CB8GS2400.C8JT 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM