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Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Patriot Memory (PDP Systems) 2400 C16 Series 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 10.6
    测试中的平均数值
Patriot Memory (PDP Systems) 2400 C16 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 65
    左右 -110% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 31
  • 读取速度，GB/s
    4,806.8 left arrow 15.6
  • 写入速度，GB/s
    2,784.6 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2837

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
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