Samsung M3 78T5663RZ3-CF7 2GB vs Ramaxel Technology RMUA5210ME88HCF-3200 32GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.8

测试中的平均数值

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

需要考虑的原因
Ramaxel Technology RMUA5210ME88HCF-3200 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 65

左右 -124% 更低的延时
更快的写入速度，GB/s

8.8 2,784.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 29
读取速度，GB/s

4,806.8 14.8
写入速度，GB/s

2,784.6 8.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

932 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Peak Electronics 256X64M-67E 2GB

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Kingston 9905702-150.A00G 8GB

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Corsair CMK8GX4M1Z3600C18 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

Crucial Technology CT51264BA160BJ.8F1 4GB

Crucial Technology CT51264BA160BJ.8F1 4GB

Crucial Technology CT51264BA160BJ.M8F 4GB

Crucial Technology CT51264BA160BJ.M8F 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Kingston KHX2133C14S4/16G 16GB

Kingston KHX2133C14S4/16G 16GB