Samsung M3 78T6553CZ3-CD5 512MB vs SK Hynix HMA82GS6DJR8N-WM 16GB

总分

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

总分

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

差异规格评论

差异

Samsung M3 78T6553CZ3-CD5 512MB

需要考虑的原因
Samsung M3 78T6553CZ3-CD5 512MB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值

SK Hynix HMA82GS6DJR8N-WM 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-WM 16GB

报告一个错误

低于PassMark测试中的延时，ns

43 56

左右 -30% 更低的延时
更快的写入速度，GB/s

13.0 1,501.2

测试中的平均数值
更高的内存带宽，mbps

23400 4200

左右 5.57 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T6553CZ3-CD5 512MB

SK Hynix HMA82GS6DJR8N-WM 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 43
读取速度，GB/s

3,161.0 15.0
写入速度，GB/s

1,501.2 13.0
内存带宽，mbps

4200 23400

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

4-4-4-12 / 533 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

381 2794

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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