Samsung M3 91T2953GZ3-CF7 1GB vs Corsair CMSX16GX4M1A2400C16 16GB

总分

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

差异规格评论

差异

Samsung M3 91T2953GZ3-CF7 1GB

需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值

Corsair CMSX16GX4M1A2400C16 16GB

需要考虑的原因
Corsair CMSX16GX4M1A2400C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的写入速度，GB/s

11.9 1,906.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 91T2953GZ3-CF7 1GB

Corsair CMSX16GX4M1A2400C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

4,672.4 15.8
写入速度，GB/s

1,906.4 11.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

698 2967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N