Samsung M3 93T5750CZA-CE6 2GB vs A-DATA Technology AO1P32MC8T1-BW3S 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.8

测试中的平均数值

A-DATA Technology AO1P32MC8T1-BW3S 8GB

需要考虑的原因
A-DATA Technology AO1P32MC8T1-BW3S 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 18.7
写入速度，GB/s

2,622.0 15.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3729

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX4GX3M1A1600C9 4GB

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Corsair CMN32GX4M2Z3600C16 16GB

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Kingston HP698651-154-MCN 8GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BL8G32C16U4WL.M8FE1 8GB

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SK Hynix HMT42GR7AFR4C-RD 16GB

Kingston KKRVFX-MIE 8GB

Kingston KKRVFX-MIE 8GB

Kingston 9905471-076.A00LF 8GB

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Apacer Technology 78.DAGQ7.40B0B 16GB

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Kingston 9965516-112.A00LF 16GB

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Lexar Co Limited LD4BU008G-H3200ULH 8GB

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Samsung M393B1K70CH0-CH9 8GB

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A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB