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Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
20.8
测试中的平均数值
更快的写入速度,GB/s
2,622.0
15.1
测试中的平均数值
需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
77
左右 -328% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
18
读取速度,GB/s
3,405.2
20.8
写入速度,GB/s
2,622.0
15.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
3402
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965516-112.A00LF 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
G Skill Intl F5-5600J4040C16G 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMR64GX4M8C3200C16 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Samsung M393B5170FH0-CH9 4GB
SK Hynix GKE800UD102408-2400 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMK64GX4M8X4133C19 8GB
Kingston KP223C-ELD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Kingston 99U5471-052.A00LF 8GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
INTENSO 5641160 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2933C14-16GTZRX 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
A-DATA Technology DQKD1A08 1GB
Corsair CMW32GX4M2C3466C16 16GB
报告一个错误
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Bug description
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