Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异

  • 低于PassMark测试中的延时,ns
    29 left arrow 31
    左右 6% 更低的延时
  • 更快的读取速度,GB/s
    16.9 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.4 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    29 left arrow 31
  • 读取速度,GB/s
    12.1 left arrow 16.9
  • 写入速度,GB/s
    7.8 left arrow 12.4
  • 内存带宽,mbps
    12800 left arrow no data
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2177 left arrow 3043
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较