Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK8GX4M1A2400C16 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMK8GX4M1A2400C16 8GB

Corsair CMK8GX4M1A2400C16 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.9

测试中的平均数值

Corsair CMK8GX4M1A2400C16 8GB

需要考虑的原因
Corsair CMK8GX4M1A2400C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK8GX4M1A2400C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 15.6
写入速度，GB/s

2,622.0 10.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Asgard VMA42UH-MEC1U2AJ2 16GB

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Corsair CM4X16GC3200C16K2 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Gloway International (HK) STK4U2133D15081C 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB