Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMT16GX4M2C3200C14 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.5

测试中的平均数值

Corsair CMT16GX4M2C3200C14 8GB

需要考虑的原因
Corsair CMT16GX4M2C3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 77

左右 -120% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMT16GX4M2C3200C14 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 35
读取速度，GB/s

3,405.2 17.0
写入速度，GB/s

2,622.0 11.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB